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DC COMPONENTS CO., LTD.
R
DC9018
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Pinning
1 = Emitter 2 = Base 3 = Collector
Absolute Maximum Ratings(TA=25
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC IB PD TJ TSTG
o
C) Rating 30 15 5 50 10 400 +150 -55 to +150 Unit V V V mA mA mW
o o
Symbol
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
321
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO
(1)
Min 30 15 5 28 700 2%
Typ 1100 1.3
Max 50 0.5 270 1.7
Unit V V V nA V MHz pF
Test Conditions IC=100A IC=1mA IE=100A VCB=12V IC=10mA, IB=1mA IC=1mA, VCE=5V IC=5mA, VCE=5V VCB=10V, IE=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain
(1)
VCE(sat) hFE fT
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
Cob 380s, Duty Cycle
Classification of hFE
Rank Range D 28~45 E 39~60 F 54~80 G 72~108 H 97~146 I 132~198 J 180~270


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